Beschichtungszusammensetzung für die Filmherstellung und Material für isolierenden Schichten
A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for i...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | NISHIKAWA, MICHINORI KAKUTA, MAYUMI YAMADA, KINJI INOUE, YASUTAKE HAKAMATSUKA, SATOKO TAMAKI, KENTAROU EBISAWA, MASAHIKO |
| description | A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the formula (1): R aSi(OR )4-a, and (A-2) compounds represented by the formula (2): R b(R O)3-bSi-(R )d-Si(OR )3-cR c; and (B) a compound represented by the formula (3): R O(CHCH3CH2O)eR . |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE60021476TT2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE60021476TT2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE60021476TT23</originalsourceid><addsrcrecordid>eNqNjLEKwjAURbM4iPoPwV2oVequtrg42dkSmlsTSF5LXrL029z8MZX6AU6Xwzncubgfwa2xrYmJHjwmVt6DGHH8sOxezyC1hays8waBI5z7ikRaXlVEsMpNleXeWQSQBsnbdAlailmnHGP124VYV2V9umww9A14UC0IsTmXRZbl2_2hqOt891f0BjfAP-w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Beschichtungszusammensetzung für die Filmherstellung und Material für isolierenden Schichten</title><source>esp@cenet</source><creator>NISHIKAWA, MICHINORI ; KAKUTA, MAYUMI ; YAMADA, KINJI ; INOUE, YASUTAKE ; HAKAMATSUKA, SATOKO ; TAMAKI, KENTAROU ; EBISAWA, MASAHIKO</creator><creatorcontrib>NISHIKAWA, MICHINORI ; KAKUTA, MAYUMI ; YAMADA, KINJI ; INOUE, YASUTAKE ; HAKAMATSUKA, SATOKO ; TAMAKI, KENTAROU ; EBISAWA, MASAHIKO</creatorcontrib><description>A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the formula (1): R aSi(OR )4-a, and (A-2) compounds represented by the formula (2): R b(R O)3-bSi-(R )d-Si(OR )3-cR c; and (B) a compound represented by the formula (3): R O(CHCH3CH2O)eR .</description><language>ger</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CABLES ; CHEMICAL PAINT OR INK REMOVERS ; CHEMISTRY ; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS ; CONDUCTORS ; CORRECTING FLUIDS ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FILLING PASTES ; INKS ; INSULATORS ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PASTES OR SOLIDS FOR COLOURING OR PRINTING ; POLISHES ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SEMICONDUCTOR DEVICES ; USE OF MATERIALS THEREFOR ; WOODSTAINS</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060524&DB=EPODOC&CC=DE&NR=60021476T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060524&DB=EPODOC&CC=DE&NR=60021476T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHIKAWA, MICHINORI</creatorcontrib><creatorcontrib>KAKUTA, MAYUMI</creatorcontrib><creatorcontrib>YAMADA, KINJI</creatorcontrib><creatorcontrib>INOUE, YASUTAKE</creatorcontrib><creatorcontrib>HAKAMATSUKA, SATOKO</creatorcontrib><creatorcontrib>TAMAKI, KENTAROU</creatorcontrib><creatorcontrib>EBISAWA, MASAHIKO</creatorcontrib><title>Beschichtungszusammensetzung für die Filmherstellung und Material für isolierenden Schichten</title><description>A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the formula (1): R aSi(OR )4-a, and (A-2) compounds represented by the formula (2): R b(R O)3-bSi-(R )d-Si(OR )3-cR c; and (B) a compound represented by the formula (3): R O(CHCH3CH2O)eR .</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CHEMICAL PAINT OR INK REMOVERS</subject><subject>CHEMISTRY</subject><subject>COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS</subject><subject>CONDUCTORS</subject><subject>CORRECTING FLUIDS</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FILLING PASTES</subject><subject>INKS</subject><subject>INSULATORS</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PASTES OR SOLIDS FOR COLOURING OR PRINTING</subject><subject>POLISHES</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>USE OF MATERIALS THEREFOR</subject><subject>WOODSTAINS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwjAURbM4iPoPwV2oVequtrg42dkSmlsTSF5LXrL029z8MZX6AU6Xwzncubgfwa2xrYmJHjwmVt6DGHH8sOxezyC1hays8waBI5z7ikRaXlVEsMpNleXeWQSQBsnbdAlailmnHGP124VYV2V9umww9A14UC0IsTmXRZbl2_2hqOt891f0BjfAP-w</recordid><startdate>20060524</startdate><enddate>20060524</enddate><creator>NISHIKAWA, MICHINORI</creator><creator>KAKUTA, MAYUMI</creator><creator>YAMADA, KINJI</creator><creator>INOUE, YASUTAKE</creator><creator>HAKAMATSUKA, SATOKO</creator><creator>TAMAKI, KENTAROU</creator><creator>EBISAWA, MASAHIKO</creator><scope>EVB</scope></search><sort><creationdate>20060524</creationdate><title>Beschichtungszusammensetzung für die Filmherstellung und Material für isolierenden Schichten</title><author>NISHIKAWA, MICHINORI ; KAKUTA, MAYUMI ; YAMADA, KINJI ; INOUE, YASUTAKE ; HAKAMATSUKA, SATOKO ; TAMAKI, KENTAROU ; EBISAWA, MASAHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE60021476TT23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>2006</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CHEMICAL PAINT OR INK REMOVERS</topic><topic>CHEMISTRY</topic><topic>COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS</topic><topic>CONDUCTORS</topic><topic>CORRECTING FLUIDS</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FILLING PASTES</topic><topic>INKS</topic><topic>INSULATORS</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PASTES OR SOLIDS FOR COLOURING OR PRINTING</topic><topic>POLISHES</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>USE OF MATERIALS THEREFOR</topic><topic>WOODSTAINS</topic><toplevel>online_resources</toplevel><creatorcontrib>NISHIKAWA, MICHINORI</creatorcontrib><creatorcontrib>KAKUTA, MAYUMI</creatorcontrib><creatorcontrib>YAMADA, KINJI</creatorcontrib><creatorcontrib>INOUE, YASUTAKE</creatorcontrib><creatorcontrib>HAKAMATSUKA, SATOKO</creatorcontrib><creatorcontrib>TAMAKI, KENTAROU</creatorcontrib><creatorcontrib>EBISAWA, MASAHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NISHIKAWA, MICHINORI</au><au>KAKUTA, MAYUMI</au><au>YAMADA, KINJI</au><au>INOUE, YASUTAKE</au><au>HAKAMATSUKA, SATOKO</au><au>TAMAKI, KENTAROU</au><au>EBISAWA, MASAHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Beschichtungszusammensetzung für die Filmherstellung und Material für isolierenden Schichten</title><date>2006-05-24</date><risdate>2006</risdate><abstract>A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the formula (1): R aSi(OR )4-a, and (A-2) compounds represented by the formula (2): R b(R O)3-bSi-(R )d-Si(OR )3-cR c; and (B) a compound represented by the formula (3): R O(CHCH3CH2O)eR .</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | ger |
| recordid | cdi_epo_espacenet_DE60021476TT2 |
| source | esp@cenet |
| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CABLES CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS CONDUCTORS CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES INKS INSULATORS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING POLISHES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES USE OF MATERIALS THEREFOR WOODSTAINS |
| title | Beschichtungszusammensetzung für die Filmherstellung und Material für isolierenden Schichten |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T06%3A43%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NISHIKAWA,%20MICHINORI&rft.date=2006-05-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE60021476TT2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |