Beschichtungszusammensetzung für die Filmherstellung und Material für isolierenden Schichten

A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for i...

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Bibliographische Detailangaben
Hauptverfasser:	NISHIKAWA, MICHINORI, KAKUTA, MAYUMI, YAMADA, KINJI, INOUE, YASUTAKE, HAKAMATSUKA, SATOKO, TAMAKI, KENTAROU, EBISAWA, MASAHIKO
Format:	Patent
Sprache:	ger
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CABLES CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS CONDUCTORS CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES INKS INSULATORS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING POLISHES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the formula (1): R aSi(OR )4-a, and (A-2) compounds represented by the formula (2): R b(R O)3-bSi-(R )d-Si(OR )3-cR c; and (B) a compound represented by the formula (3): R O(CHCH3CH2O)eR .