Method for producing a single crystal

A seed crystal is joined to a polycrystal, in particular at one end of the polycrystal. A linked crystal material is fused in a zero-gravity or microgravity environment without any container, and a single crystal is produced by overgrowth (epitaxial growth).

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Bibliographische Detailangaben
Hauptverfasser:	NISHIDA, ISAO, TSUKUBA, IBARAKI, JP, TAKAHASHI, SATOSHI, TSUKUBA, IBARAKI, JP, OZAWA, KIYOSHI, TSUKUBA, IBARAKI, JP, NAKATANI, ISAO, TSUKUBA, IBARAKI, JP
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A seed crystal is joined to a polycrystal, in particular at one end of the polycrystal. A linked crystal material is fused in a zero-gravity or microgravity environment without any container, and a single crystal is produced by overgrowth (epitaxial growth).