Thin film transistor
A thin film transistor has (a) a gate electrode (12) on a predetermined substrate (11) region; (b) a gate insulation film (14) on the substrate (11) and the gate electrode (12); (c) a semiconductor layer (15) on the gate insulation film (14); (d) impurity diffusion regions in selected parts of the s...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A thin film transistor has (a) a gate electrode (12) on a predetermined substrate (11) region; (b) a gate insulation film (14) on the substrate (11) and the gate electrode (12); (c) a semiconductor layer (15) on the gate insulation film (14); (d) impurity diffusion regions in selected parts of the semiconductor layer (5); and (e) channel regions (15c) in both parts of the semiconductor layer (15) at opposite sides of the gate electrode (12). Also claimed is a TFT prodn. process. |
---|