Thin film transistor

A thin film transistor has (a) a gate electrode (12) on a predetermined substrate (11) region; (b) a gate insulation film (14) on the substrate (11) and the gate electrode (12); (c) a semiconductor layer (15) on the gate insulation film (14); (d) impurity diffusion regions in selected parts of the s...

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Bibliographische Detailangaben
1. Verfasser: CHOI, JONG MOON, SEOUL/SOUL, KR
Format: Patent
Sprache:eng ; ger
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Beschreibung
Zusammenfassung:A thin film transistor has (a) a gate electrode (12) on a predetermined substrate (11) region; (b) a gate insulation film (14) on the substrate (11) and the gate electrode (12); (c) a semiconductor layer (15) on the gate insulation film (14); (d) impurity diffusion regions in selected parts of the semiconductor layer (5); and (e) channel regions (15c) in both parts of the semiconductor layer (15) at opposite sides of the gate electrode (12). Also claimed is a TFT prodn. process.