Method for producing a single-electrode component

Method for producing a single-electrode component

In order to produce an MOS technology single-electrode component, an active region which is provided with a gate dielectric (16) is defined in a silicon substrate (14). Using a fine structuring method, in particular with electron beam lithography, a first gate plane (12) with fine structures < 10...

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Bibliographische Detailangaben
Hauptverfasser: ROESNER, WOLFGANG. DR., 81739 MUENCHEN, DE, VOGELSANG, THOMAS. DR., 81379 MUENCHEN, DE
Format: Patent
Sprache:eng ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:In order to produce an MOS technology single-electrode component, an active region which is provided with a gate dielectric (16) is defined in a silicon substrate (14). Using a fine structuring method, in particular with electron beam lithography, a first gate plane (12) with fine structures < 100 nm is produced, the surface and flanks of which are covered with an insulating layer (17, 17a). A second gate plane (13) is produced which covers the fine structures of the first gate plane (12) at least in the vicinity of the active region.