Etch-resistant, highly viscous positive resist for photolithography

Positive-working, etch-resistant, highly viscous photoresist for photolithographic prodn. of microstructures contains 3,4,5-tris- (1',2'-naphthoquinone- 2'-diazido-5'-sulphonyloxy)- alkoxycarbonyl benzene of formula (I) as light sensitive component, a novolak of formula (II), obt...

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Bibliographische Detailangaben
Hauptverfasser:	MISCHKE, HELGE, O-1197 BERLIN, DE, SCHIRMER, MATTHIAS, O-1142 BERLIN, DE, HELM, SIEGRUN., O-1017 BERLIN, DE, MAERTEN, BIRGIT, O-1162 BERLIN, DE, GRUETZNER, GABY, O-1143 BERLIN, DE, BENDIG, JUERGEN., O-1156 BERLIN, DE
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	Positive-working, etch-resistant, highly viscous photoresist for photolithographic prodn. of microstructures contains 3,4,5-tris- (1',2'-naphthoquinone- 2'-diazido-5'-sulphonyloxy)- alkoxycarbonyl benzene of formula (I) as light sensitive component, a novolak of formula (II), obtd. by acid catalysed condensn. of o-cresol and p-tert.-butylphenol (III) with HCHO as polymeric binder, (III) as additive, and a ketone, ester, ether, aromatic, lactone or mixt. of these as solvent.The photoresist contains 20-60 (wt.)% solids, with 15-35% (I) and 3-8% (III) w.r.t. total solids. n is 4-10.