Photoresist soln. contg. acyclic or cyclic siloxane] cpd. - to reduce surface roughness of coating, useful for structurising microelectronic device

Photoresist soln. contains 0.001-1.0 (wt.)% of an (a)cyclic siloxane cpd. (I) of the formula: (Me3Si)n(MeSi(R)O)m(SiMe3)n (I); m = 3-100; n = 0 or 1; R = Me or H or Me and H with variable sequence. More specifically, 2n+m = 5-9. (I) is used in a concn. of 0.05-0.5%. USE/ADVANTAGE - (I) improves the...

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Hauptverfasser:	BAUMBACH, WOLFGANG, O-1058 BERLIN, DE, HAEHNEL, ELFRIEDE, O-1197 BERLIN, DE, SEIBT, HORST., O-1055 BERLIN, DE, PRESCHER, DIETRICH., O-1193 BERLIN, DE, ENGELBRECHT, LOTHAR., O-1130 BERLIN, DE, LEHMANN, LUKAS, O-1055 BERLIN, DE, BARNIKOW, JOACHIM, O-1170 BERLIN, DE, LEHMS, INGEBURG, O-8010 DRESDEN, DE
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Zusammenfassung:	Photoresist soln. contains 0.001-1.0 (wt.)% of an (a)cyclic siloxane cpd. (I) of the formula: (Me3Si)n(MeSi(R)O)m(SiMe3)n (I); m = 3-100; n = 0 or 1; R = Me or H or Me and H with variable sequence. More specifically, 2n+m = 5-9. (I) is used in a concn. of 0.05-0.5%. USE/ADVANTAGE - (I) improves the film-forming property, i.e., reduces the surface roughness to 10nm, making the resist pref. for structurising microelectronic devices. In an example, a planar Si wafer (2 in. dia.) with an unstructurised 0.8 micron thick SiO2 coating, was given a 1.50 micron thick coating by spin coating with a commercially available positive photoresist soln. ('FK 2001'; RTM) treated with (A) no (I); (B) 0.6 vol.-% mixt. of cyclo-(dimethylsiloxane) cpds., contg. cyclo-tri-, -tetra- and -penta-(dimethylsiloxane). The surface roughness was (A) 35, (B) less than 10nm.