Positive photoresist soln. contg. siloxane with fluoroalkyl gps. - use to reduce surface roughness of coating, useful for structurising microelectronic device

Positive resist consists of a photosensitive coating soln., treated with 0.001-1.0 (wt.) of a siloxane cpds. (I), contg. fluoroalkyl gps., of the formula: RF = X(CF2)m(CH2)p, C6F5, C6F5COCH2CH2 or C6F5CH2; X = F or H; m = 1-10; p = 1 or 2; R' = H or Me; Y = a linear, branched and/or cyclic 2-20...

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Bibliographische Detailangaben
Hauptverfasser:	BAUMBACH, WOLFGANG, O-1058 BERLIN, DE, HAEHNEL, ELFRIEDE, O-1197 BERLIN, DE, PRESCHER, DIETRICH., O-1193 BERLIN, DE, LEHMANN, LUKAS, O-1055 BERLIN, DE, ENGELBRECHT, LOTHAR., O-1130 BERLIN, DE, BARNIKOW, JOACHIM, O-1170 BERLIN, DE, SEIBT, HORST, LEHMS, INGEBURG, O-8010 DRESDEN, DE, PLATANOW, V. E., NOVOSIBIRSK, SU
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	Positive resist consists of a photosensitive coating soln., treated with 0.001-1.0 (wt.) of a siloxane cpds. (I), contg. fluoroalkyl gps., of the formula: RF = X(CF2)m(CH2)p, C6F5, C6F5COCH2CH2 or C6F5CH2; X = F or H; m = 1-10; p = 1 or 2; R' = H or Me; Y = a linear, branched and/or cyclic 2-20 Si methylsiloxanyl gp. or a linear and/or branched 20-100 Si methyl-polysiloxanyl gp.. USE/ADVANTAGE - Addn. of (I) improves the film-forming property, i.e., a surface roughness less than 10nm is attached, making the photoresist esp. suitable for structurising microelectronic devices.