Negative photoresist for sub-micron structurising - contains mixed cresol formaldehyde condensate as binder and specified quinone di:azide cpd., developed using dry process
Negative photoresist suitable for dry development for microlithographic recording is produced by coating a semiconductor substrate with a film-forming soln. in an organic solvent (mixt.), drying, exposure with UV or visible light, gas phase silylation and development with a plasma contg. O2. The nov...
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| creator | ABRAHAM, HANS WERNER., O-1403 BIRKENWERDER, DE ROLL, ECKARD, O-8010 DRESDEN, DE RICHTER, KAROLA, O-8036 DRESDEN, DE MEHLISS, GEORG, O-1055 BERLIN, DE BAUER, JOACHIM DIETRICH, BURKHART, DR BAUCH, LOTHAR., O-8046 DRESDEN, DE HELLER, GUNHILD., O-8020 DRESDEN, DE RISTO, KATRIN, O-1200 FRANKFURT, DE |
| description | Negative photoresist suitable for dry development for microlithographic recording is produced by coating a semiconductor substrate with a film-forming soln. in an organic solvent (mixt.), drying, exposure with UV or visible light, gas phase silylation and development with a plasma contg. O2. The novelty is that the binder used consists of a condensation prod. of cresol mixts. and HCHO and the light-sensitive component is a 2,4-bis-(1-hydroxybenzyl or 1-hydroxy-3-alkyl-benzyl)-phenol or -6-alkylphenol tris(1,2-naphthoquinone-(2)-diazido)-4- or -5-sulphonate) of formula (I) and opt. a dyestuff. In (I), R = alkyl or H; D = a 1,2-naphthoquinone-(2)-diazide-4- or -5-sulphonyl gp.). USE/ADVANTAGE - The resist is suitable for making microelectronic devices in the multi-Mbit-memory level. Masks for producing structures with high resolution (in sub-micron region) and definition, with great technological latitude, can be made in less time and using less energy than usual. |
| format | Patent |
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O2. The novelty is that the binder used consists of a condensation prod. of cresol mixts. and HCHO and the light-sensitive component is a 2,4-bis-(1-hydroxybenzyl or 1-hydroxy-3-alkyl-benzyl)-phenol or -6-alkylphenol tris(1,2-naphthoquinone-(2)-diazido)-4- or -5-sulphonate) of formula (I) and opt. a dyestuff. In (I), R = alkyl or H; D = a 1,2-naphthoquinone-(2)-diazide-4- or -5-sulphonyl gp.). USE/ADVANTAGE - The resist is suitable for making microelectronic devices in the multi-Mbit-memory level. 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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Negative photoresist for sub-micron structurising - contains mixed cresol formaldehyde condensate as binder and specified quinone di:azide cpd., developed using dry process |
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