Negative photoresist for sub-micron structurising - contains mixed cresol formaldehyde condensate as binder and specified quinone di:azide cpd., developed using dry process

Negative photoresist suitable for dry development for microlithographic recording is produced by coating a semiconductor substrate with a film-forming soln. in an organic solvent (mixt.), drying, exposure with UV or visible light, gas phase silylation and development with a plasma contg. O2. The novelty is that the binder used consists of a condensation prod. of cresol mixts. and HCHO and the light-sensitive component is a 2,4-bis-(1-hydroxybenzyl or 1-hydroxy-3-alkyl-benzyl)-phenol or -6-alkylphenol tris(1,2-naphthoquinone-(2)-diazido)-4- or -5-sulphonate) of formula (I) and opt. a dyestuff. In (I), R = alkyl or H; D = a 1,2-naphthoquinone-(2)-diazide-4- or -5-sulphonyl gp.). USE/ADVANTAGE - The resist is suitable for making microelectronic devices in the multi-Mbit-memory level. Masks for producing structures with high resolution (in sub-micron region) and definition, with great technological latitude, can be made in less time and using less energy than usual.