DE4034644

In a superconducting device containing layers of superconducting material with the crystal structure of the high-temperature superconductor RE Ba2Cu3O7(RE = rare earth) grown on a substrate, the superconducting layers alternate with a normal conducting barrier layer. The object of the invention is to find a material having a variable electrical resistivity which is as high as possible for the barrier layer. This is achieved by a barrier layer in which the rare earth metal is Pr and Cu is partly replaced by gallium.