PLATINDIFFUSIONSVERFAHREN FUER EINEN HALBLEITERKOERPER

Platinum atoms are uniformly dispersed throughout a silicon wafer containing preformed junctions by depositing a layer of platinum on a clean silicon surface and thereafter immediately heating the wafer to about 500 DEG C. to form platinum silicide. Alternatively, a layer of palladium may be deposited on the surface of the wafer, a layer of platinum is deposited atop the palladium and the wafer is heated to form a palladium silicide with platinum atoms uniformly dispersed throughout the silicide layer. The wafer is heated to about 900 DEG C. for a short time which is sufficiently high to cause the platinum atoms to diffuse into the silicon wafer but is too low and lasts for too short a time to cause the movement of the preformed junctions within the wafer.