VERWENDUNG VON METALLORGANISCHEN VERBINDUNGEN ZUR ABSCHEIDUNG DUENNER FILME AUS DER GASPHASE

PCT No. PCT/EP90/00356 Sec. 371 Date Sep. 6, 1991 Sec. 102(e) Date Sep. 6, 1991 PCT Filed Mar. 3, 1990 PCT Pub. No. WO90/10726 PCT Pub. Date Sep. 20, 1986.The invention relates to the use of organometallic compounds containing, as metals, aluminum, gallium or indium for the deposition of thin films...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HOSTALEK, MARTIN. DR., 6100 DARMSTADT, DE, ERDMANN, DIETRICH. DR., 6109 MUEHLTAL, DE, POHL, LUDWIG. DR
Format:	Patent
Sprache:	ger
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PCT No. PCT/EP90/00356 Sec. 371 Date Sep. 6, 1991 Sec. 102(e) Date Sep. 6, 1991 PCT Filed Mar. 3, 1990 PCT Pub. No. WO90/10726 PCT Pub. Date Sep. 20, 1986.The invention relates to the use of organometallic compounds containing, as metals, aluminum, gallium or indium for the deposition of thin films or epitactic layers from the gas phase.