VERFAHREN UND VORRICHTUNG ZUR ZUECHTUNG VON SILIZIUMKRISTALLEN

VERFAHREN UND VORRICHTUNG ZUR ZUECHTUNG VON SILIZIUMKRISTALLEN

A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of betwee...

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Bibliographische Detailangaben
Hauptverfasser: HIGUCHI, AKIRA, OMIYA, SAITAMA, JP, YAMASHITA, ICHIRO, FURUYA, HISASHI, ITAMI, HYOGO, JP, SHIMIZU, KOUTARO, OMIYA, SAITAMA, JP, BANBA, YOSHIAKI, URAWA, SAITAMA, JP, SHIMANUKI, YASUSHI, HASUDA, SAITAMA, JP
Format: Patent
Sprache:ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050 DEG to 850 DEG C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050 DEG to 850 DEG C., is not longer than 140 min.