Photoelektrische Wandlereinrichtung

Disclosed is a photoelectric conversion device which comprises: a photoconductive layer (34, 44, 57, 67) made of amorphous semiconductor material which shows charge multiplication and which converts photo signals (37, 47, 50, 60) into electric signals; and a substrate (31, 41, 51, 61) having electri...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KAWAMURA, TATSURO, TAMA-SHI, NONAKA, YASUHIKO, MOBARA-SHI, TSUJI, KAZUTAKA, HACHIOJI-SHI, HIRAI, TADAAKI, KOGANEI-SHI, YAMASHITA, TAKASHI, SAGAMIHARA-SHI, TAKASAKI, YUKIO, ASAO-KU KAWASAKI-SHI, ISHIOKA, SACHIO, BURLINGAME, CA 94010, TAKETOSHI, KAZUHISA, SAGAMIHARA-SHI, ANDO, FUMIHIKO, MIDORI-KU YOKOHAMA, SHIDARA, KEIICHI, TAMA-SHI, TANIOKA, KENKICHI, SETAGAYA-KU TOKYO, MAKISHIMA, TATSUO, NOZAKI-3OME MITAKA-SHI
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Disclosed is a photoelectric conversion device which comprises: a photoconductive layer (34, 44, 57, 67) made of amorphous semiconductor material which shows charge multiplication and which converts photo signals (37, 47, 50, 60) into electric signals; and a substrate (31, 41, 51, 61) having electric circuits or the like (32, 42, 56, 66) (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.