Kontakt auf Galliumarsenid und dessen Herstellungsverfahren

A thermally stable low resistance ohmic contact to a gallium and arsenic containing substrate is fabricated using a layer of refractory material, and a layer of indium and a metal which forms thermally stable intermetallic compounds and/or single solid phase with indium. In forming the contact, a layer of indium is sandwiched between two layers of said metal, the sandwiched array of layers sitting on the substrate with the refractory material layer on top to form a stratified structure. The stratified structure is heated to form at least one intermetallic compound of said metal and indium and/or a single solid phase of indium and said metal and an InGaAs layer at the metal/semiconductor interface. Also a uniform fine distribution of InGaAs layer at the metal/gallium arsenide interface is formed which results in low contact resistance.