Verfahren zum Herstellen einer Halbleiteranordnung mit einem Oxid niedriger Fehlerdichte

Low defect density oxides suitable for use as thin gate oxides or in charge storage capacitors are described. First (3) and second (5) dielectric layers are formed on a substrate (1) with misaligned defect structures. A third layer (9) (an oxide) is then grown by diffusing an oxidizing species through the first and second layers to the substrate. The species reacts with the substrate. The low defect density results from the misaligned defect structure of the first and second layers. In one embodiment, the first and second layers are grown and deposited oxides, respectively. The third layer is grown by diffusing oxygen through the first two layers, where the interface between the first and second layers acts as a sink trapping defects. The oxide silicon interface has desirable characteristics (essentially planar and stress-free) because the oxide grows in near equilibrium conditions.