Quantumquellen-Leitungen und -Büchsen enthaltende Halbleiterstrukturen

Quantumquellen-Leitungen und -Büchsen enthaltende Halbleiterstrukturen

A method of fabricating semiconductor structures, quantum well wires and boxes is described in which interdiffusion in a semiconductor having a compositional profile is enhanced by the presence of defects created by ion implantation in localized regions. A representative structure is shown in Fig. 5...

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Bibliographische Detailangaben
Hauptverfasser: CIBERT, JOEL BERNARD, F-38400 ST. MARTIN D'HERES, FR, GOSSARD, ARTHUR CHARLES, WARREN NEW JERSEY 07060, US, PETROFF, PIERRE MARC, SANTA BARBARA CALIFORNIA 93105, US, PEARTON, STEPHEN JOHN, SUMMIT NEW JERSEY 07901, US
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method of fabricating semiconductor structures, quantum well wires and boxes is described in which interdiffusion in a semiconductor having a compositional profile is enhanced by the presence of defects created by ion implantation in localized regions. A representative structure is shown in Fig. 5.