Process for improving the wettability of the surfaces of SiC ceramic by metal

To improve the wettability of the surfaces of SiC ceramic by metal, a 1-3 mu m thick titanium layer is applied, preferably by sputtering, to the polished ceramic surface, preferably cleaned by means of Ar etching. The ceramic is then maintained at a temperature in the range of 1200-1550@C, preferabl...

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Hauptverfasser:	NAOUMIDIS, ARISTIDES. DR., 5170 JUELICH, DE, GOTTSELIG, BERND., 5020 FRECHEN, DE, GYARMATI, ERNOE. DR
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE LIME, MAGNESIA METALLURGY REFRACTORIES SLAG TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	To improve the wettability of the surfaces of SiC ceramic by metal, a 1-3 mu m thick titanium layer is applied, preferably by sputtering, to the polished ceramic surface, preferably cleaned by means of Ar etching. The ceramic is then maintained at a temperature in the range of 1200-1550@C, preferably at 1450@C, for at least 0.5 hour, in particular for 1-2 hours, under protective gas (preferably argon freed of oxidising residues). The heating rate is here preferably about 20-60@C/min. In this way there is formed on the ceramic surface a titanium carbosilicide layer (Ti3SiC2) which is outstandingly suitable, for example, for soldered and diffusion-welded bonds to metals.