VERFAHREN ZUR HYDROPHILIERENDEN UND/ODER KITTRESTE ENTFERNENDEN OBERFLAECHENBEHANDLUNG VON SILICIUMSCHEIBEN

Silicon wafers can be provided with a hydrophilic surface and/or freed of adhering cement residues originating from the polishing operation with the aid of solutions adjusted to a pH of 8 to 14 with the aid of alkali-metal or alkaline-earth-metal compounds and containing hydrogen peroxide. These pro...

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Bibliographische Detailangaben
Hauptverfasser:	BAUER-MAYER,SUSANNE,DR, GRIESSHAMMER,RUDOLF,DR, BRUNNER,ROLAND, KIRSCHNER,HELMUT
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY CLEANING CLEANING IN GENERAL COMPOUNDS THEREOF ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	Silicon wafers can be provided with a hydrophilic surface and/or freed of adhering cement residues originating from the polishing operation with the aid of solutions adjusted to a pH of 8 to 14 with the aid of alkali-metal or alkaline-earth-metal compounds and containing hydrogen peroxide. These processes can even be carried out at room temperature and are remarkable for their low chemical consumption and easy manageability.