Metal-oxide semiconductor field-effect transistor (MOSFET) and method for producing it

Metal-oxide semiconductor field-effect transistor (MOSFET) and method for producing it

A MOSFET (54) which is particularly suitable for submicron p-channel devices and a method for producing it are described. The MOSFET has a pair of buffer areas (70, 72), which are implanted below the source (58) and the sink (60), and a screening area (66, 68), which is implanted below the channel a...

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Hauptverfasser: MAN CHAM,KIT, FU,HORNG-SEN, NG,SAU-LAN
Format: Patent
Sprache:eng ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MAN CHAM,KIT
FU,HORNG-SEN
NG,SAU-LAN
description A MOSFET (54) which is particularly suitable for submicron p-channel devices and a method for producing it are described. The MOSFET has a pair of buffer areas (70, 72), which are implanted below the source (58) and the sink (60), and a screening area (66, 68), which is implanted below the channel area (62) and above the buffer areas (70, 72). The buffer areas (70, 72) are essentially intrinsically conductive, and the screening area (66, 68) has the same polarity as the body (56) of the MOSFET (54).
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE3737144A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE3737144A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE3737144A13</originalsourceid><addsrcrecordid>eNqNi7EKwjAQQLM4iPoPN-qQoaTQWbTiUhwU1xKSix6kudCc4OcbwQ9wevB4b6nuA4qNmt_kEQpO5Dj5lxOeIRBGrzEEdAIy21SofP12uFxP_W0HNnmYUJ7sIVSfZ64npQeQrNUi2Fhw8-NKQV0OZ42ZRyzZOkwo47E3nematt035o_kA1-BOFg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Metal-oxide semiconductor field-effect transistor (MOSFET) and method for producing it</title><source>esp@cenet</source><creator>MAN CHAM,KIT ; FU,HORNG-SEN ; NG,SAU-LAN</creator><creatorcontrib>MAN CHAM,KIT ; FU,HORNG-SEN ; NG,SAU-LAN</creatorcontrib><description>A MOSFET (54) which is particularly suitable for submicron p-channel devices and a method for producing it are described. The MOSFET has a pair of buffer areas (70, 72), which are implanted below the source (58) and the sink (60), and a screening area (66, 68), which is implanted below the channel area (62) and above the buffer areas (70, 72). The buffer areas (70, 72) are essentially intrinsically conductive, and the screening area (66, 68) has the same polarity as the body (56) of the MOSFET (54).</description><edition>4</edition><language>eng ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1988</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19880511&amp;DB=EPODOC&amp;CC=DE&amp;NR=3737144A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19880511&amp;DB=EPODOC&amp;CC=DE&amp;NR=3737144A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MAN CHAM,KIT</creatorcontrib><creatorcontrib>FU,HORNG-SEN</creatorcontrib><creatorcontrib>NG,SAU-LAN</creatorcontrib><title>Metal-oxide semiconductor field-effect transistor (MOSFET) and method for producing it</title><description>A MOSFET (54) which is particularly suitable for submicron p-channel devices and a method for producing it are described. The MOSFET has a pair of buffer areas (70, 72), which are implanted below the source (58) and the sink (60), and a screening area (66, 68), which is implanted below the channel area (62) and above the buffer areas (70, 72). The buffer areas (70, 72) are essentially intrinsically conductive, and the screening area (66, 68) has the same polarity as the body (56) of the MOSFET (54).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1988</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKwjAQQLM4iPoPN-qQoaTQWbTiUhwU1xKSix6kudCc4OcbwQ9wevB4b6nuA4qNmt_kEQpO5Dj5lxOeIRBGrzEEdAIy21SofP12uFxP_W0HNnmYUJ7sIVSfZ64npQeQrNUi2Fhw8-NKQV0OZ42ZRyzZOkwo47E3nematt035o_kA1-BOFg</recordid><startdate>19880511</startdate><enddate>19880511</enddate><creator>MAN CHAM,KIT</creator><creator>FU,HORNG-SEN</creator><creator>NG,SAU-LAN</creator><scope>EVB</scope></search><sort><creationdate>19880511</creationdate><title>Metal-oxide semiconductor field-effect transistor (MOSFET) and method for producing it</title><author>MAN CHAM,KIT ; FU,HORNG-SEN ; NG,SAU-LAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE3737144A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; ger</language><creationdate>1988</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MAN CHAM,KIT</creatorcontrib><creatorcontrib>FU,HORNG-SEN</creatorcontrib><creatorcontrib>NG,SAU-LAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MAN CHAM,KIT</au><au>FU,HORNG-SEN</au><au>NG,SAU-LAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Metal-oxide semiconductor field-effect transistor (MOSFET) and method for producing it</title><date>1988-05-11</date><risdate>1988</risdate><abstract>A MOSFET (54) which is particularly suitable for submicron p-channel devices and a method for producing it are described. The MOSFET has a pair of buffer areas (70, 72), which are implanted below the source (58) and the sink (60), and a screening area (66, 68), which is implanted below the channel area (62) and above the buffer areas (70, 72). The buffer areas (70, 72) are essentially intrinsically conductive, and the screening area (66, 68) has the same polarity as the body (56) of the MOSFET (54).</abstract><edition>4</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Metal-oxide semiconductor field-effect transistor (MOSFET) and method for producing it
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T02%3A38%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MAN%20CHAM,KIT&rft.date=1988-05-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE3737144A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true