Metal-oxide semiconductor field-effect transistor (MOSFET) and method for producing it

Metal-oxide semiconductor field-effect transistor (MOSFET) and method for producing it

A MOSFET (54) which is particularly suitable for submicron p-channel devices and a method for producing it are described. The MOSFET has a pair of buffer areas (70, 72), which are implanted below the source (58) and the sink (60), and a screening area (66, 68), which is implanted below the channel a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MAN CHAM,KIT, FU,HORNG-SEN, NG,SAU-LAN
Format: Patent
Sprache:eng ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A MOSFET (54) which is particularly suitable for submicron p-channel devices and a method for producing it are described. The MOSFET has a pair of buffer areas (70, 72), which are implanted below the source (58) and the sink (60), and a screening area (66, 68), which is implanted below the channel area (62) and above the buffer areas (70, 72). The buffer areas (70, 72) are essentially intrinsically conductive, and the screening area (66, 68) has the same polarity as the body (56) of the MOSFET (54).