VERFAHREN ZUR ENTFERNUNG VON FILM VON DENDRITISCHEN STRANG-SILIZIUM

Method of removing film formed on dendritic web silicon during growth. The web is heated to 800 to 1200 DEG C in the presence of wet or dry oxygen, which results in the formation of a coating of silicon dioxide on the web underneath the film. The web is then immersed into a solution of hydrofluoric...

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Bibliographische Detailangaben
Hauptverfasser:	LEO MEIER,DANIEL, RAIOUDHURY,PROSENJIT, BERNARD MACNALLY,JAMES
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL CHEMISTRY CRYSTAL GROWTH METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SPRAYING OR ATOMISING IN GENERAL TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Method of removing film formed on dendritic web silicon during growth. The web is heated to 800 to 1200 DEG C in the presence of wet or dry oxygen, which results in the formation of a coating of silicon dioxide on the web underneath the film. The web is then immersed into a solution of hydrofluoric acid which lifts the film off the web, resulting in a clean surface that is acceptable for processing into solar cells.