Verfahren zum Aufwachsen einer GaAs-Einkristallschicht

Triethylgallium (TEG) and arsine (AsH3) are used as gaseous compounds for growing a GaAs monocrystal semiconductor film. One gas is introduced into the vacuum tank and then discharged after the passage of a predetermined time, and the other gas is introduced thereinto and the discharged after the pa...

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Bibliographische Detailangaben
Hauptverfasser:	NISHIZAWA, JUNICHI, SENDAI, MIYAGI, JP, ABE, HITOSHI, SENDAI, MIYAGI, JP
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Triethylgallium (TEG) and arsine (AsH3) are used as gaseous compounds for growing a GaAs monocrystal semiconductor film. One gas is introduced into the vacuum tank and then discharged after the passage of a predetermined time, and the other gas is introduced thereinto and the discharged after the passage of a predetermined time whereby a crystal for one molecular layer grows. By use of TEG as a gallium source, reaction progresses even when a temperature of the base is below 300 DEG C, and a GaAs monocrystal film which is extremely less in lattice failure and impurities was obtained.