Process for bonding (connecting) silicon carbide shaped parts

To bond shaped parts of pressureless-sintered SiC or hot-pressed SiC, a layer having a maximum thickness of 1 mu m comprising at least one carbide- and/or silicide-forming element selected from the group consisting of Ag, Al, Au, B, Be, Co, Cr, Cu, Fe, Mg, Mn, Mo, Nb, Ni, Pd, Pt, Ta, Ti, V, W and Zr...

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Bibliographische Detailangaben
Hauptverfasser:	GYARMATI,ERNOE,.DR, NAOUMIDIS,ARISTIDES,.DR
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE LIME, MAGNESIA METALLURGY REFRACTORIES SLAG TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	To bond shaped parts of pressureless-sintered SiC or hot-pressed SiC, a layer having a maximum thickness of 1 mu m comprising at least one carbide- and/or silicide-forming element selected from the group consisting of Ag, Al, Au, B, Be, Co, Cr, Cu, Fe, Mg, Mn, Mo, Nb, Ni, Pd, Pt, Ta, Ti, V, W and Zr is applied to at least one of the polished matching faces. The parts are placed together and then welded to one another in an inert or reducing atmosphere, the temperature, pressing pressure and treatment time being matched to take into account the material of the