Process for joining silicon carbide mouldings

Silicon carbide mouldings of SiC sintered without pressure or hot-pressed SiC are joined to one another by applying an at most 1 mu m thick layer of at least one carbide- and/or silicide-forming element from the group comprising Ag, Al, Au, B, Be, Co, Cr, Cu, Fe, Mg, Mn, Mo, Nb, Ni, Pd, Pt, Ti, V, W and Zr to at least one of the polished fitting surfaces and welding the assembled parts to one another in an inert or reducing atmosphere of 10 to 10 Pa at 800 to 2200 DEG C under a pressing force of 1 to 100 MPa, in particular at about 1750 DEG C under 30 MPa and 10 Pa of argon. Preferably, the thin layer is vapour-deposited or sputtered on. Cr, Cu, Ni and/or Pd have proved to be suitable coating elements.