Method for producing high-precision thin-film resistors

The invention relates to the field of microelectronics. The aim of the invention is to improve the quality of thin-film circuits. The invention is based on the object of designing a thin-film circuit, which contains thin-film resistors and a configuration of metallisation elements for circuit implementation (which elements have been produced on an insulating substrate by deposition over the entire area and substractive structuring), a technologically-determined minimum separation A being maintained between the resistor tracks and the metallisation elements, such that the synchronisation behaviour of the resistors is improved. According to the invention, in the case of such thin-film resistors (for which synchronisation behaviour with respect to one or more parameters is required and whose contact separation is 40 mu m), the metallisation elements which are used for circuit implementation and/or additional metallisation elements are arranged in the immediate vicinity of the contours of the resistor tracks, the separation of the metallisation elements from the contours of the resistor tracks being identical for all thin-film resistors and having a magnitude in the range from a minimum of A to a maximum of 100 mu m.