Vapour-deposition material for achieving extremely high vapour-deposition rates

The invention relates to a vapour-deposition material comprising a mixture of Si and SiO2 to achieve extremely high vapour-deposition rates in the production of SiO layers in vacuo. SiO layers are used, for example, as interference layers or protective layers in the surface-finishing of glasses or o...

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Hauptverfasser: SZYMANSKI,ULRICH, SCHICHT,HEINZ,.DR, LAMBRECHT,DIETER, AMBROSCH,WERNER, FISCHER,MONIKA,.ACKERMANN,GEB, GOTTWALD,HEINER,-MIN, ENGEMANN,WOLFGANG, KRUEGER,MANFRED,.DR, HILDEBRAND,HAGEN,-MIN, BECKER,HANS,.DR
Format: Patent
Sprache:eng ; ger
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Zusammenfassung:The invention relates to a vapour-deposition material comprising a mixture of Si and SiO2 to achieve extremely high vapour-deposition rates in the production of SiO layers in vacuo. SiO layers are used, for example, as interference layers or protective layers in the surface-finishing of glasses or of electronic components. The object is achieved according to the invention by the SiO2 containing strongly hydrogen bridge-bound silanol groups which absorb in the wave number region of 930...970 cm.