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A thin film insulated gate field effect transistor having an opposite conductivity type island in its channel region. The island is electrically shorted to the transistor gate electrode.

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1. Verfasser: ALLAN MACLVER,BERNARD
Format: Patent
Sprache:ger
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Zusammenfassung:A thin film insulated gate field effect transistor having an opposite conductivity type island in its channel region. The island is electrically shorted to the transistor gate electrode.