Complementary field-effect transistor

A complementary field-effect transistor exhibits a contacting diffusion area (7) for contacting a substrate (1) adjacently to a source diffusion area (3) of a field-effect transistor (20) which is a part of the complementary field-effect transistor. To improve the latch-up resistance, the contacting...

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Hauptverfasser: TOKUDA,TAKESHI, ASAI,SOTOJU
Format: Patent
Sprache:eng ; ger
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Zusammenfassung:A complementary field-effect transistor exhibits a contacting diffusion area (7) for contacting a substrate (1) adjacently to a source diffusion area (3) of a field-effect transistor (20) which is a part of the complementary field-effect transistor. To improve the latch-up resistance, the contacting diffusion area is constructed with a greater depth of diffusion than the source diffusion area, the contacting diffusion area covering at least a part of the lower area of the source diffusion area.