MAGNETO-OPTISCHER SPEICHER

Optical memory device has a substrate, an optical memory recording layer (I) and an O-free dielectric layer (II). (I) is pref. one of TeOx (x= 0-1), TeC and TeSe; or a rare earth transition metal alloy; or one of MnBi and MnBiCu. (II) is pref. Al nitride or Si nitride. Pref. device also includes a r...

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Bibliographische Detailangaben
Hauptverfasser:	OHTA, KENJI, YAO-SHI OSAKA-FU, JP, KATAYAMA, HIROYUKI, NARA--SHI NARA-KEN, JP, YAMAOKA, HIDEYOSHI, MATSUBARA-SHI OKASA-FU, JP, HIROKANE, JUNJI, TENRI-SHI NARA-KEN, JP, TAKAHASHI, AKIRA, NARA-SHI NARA-KEN, JP
Format:	Patent
Sprache:	ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Optical memory device has a substrate, an optical memory recording layer (I) and an O-free dielectric layer (II). (I) is pref. one of TeOx (x= 0-1), TeC and TeSe; or a rare earth transition metal alloy; or one of MnBi and MnBiCu. (II) is pref. Al nitride or Si nitride. Pref. device also includes a reflecting film on (II) of stainless steel, Ni, Ti or TiN, or Cu, Ag, Al or Au. Substrate is pref. glass polycarbonate, acrylic resin or epoxy resin. In laser optical recording and storage devices etc.. (I) is protected from oxidn. and so has good coercive force and recording performance stability.