DE3311553

For joining molded parts having silicon carbide surfaces, the surfaces are first roughened to a depth of about 100-500 mu m by removal of the free silicon either by vaporization or by etching when treating silicon containing silicon carbide layers containing at least 15% weight of excessive silicon....

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Bibliographische Detailangaben
Hauptverfasser: GUPTA, ASHOK KUMAR, NAOUMIDIS, ARISTIDES. DR., 5170 JUELICH, DE, MUENZER, RUDOLF, 5120 HERZOGENRATH, DE, GYARMATI, ERNOE. DR., 5170 JUELICH, DE
Format: Patent
Sprache:eng
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Zusammenfassung:For joining molded parts having silicon carbide surfaces, the surfaces are first roughened to a depth of about 100-500 mu m by removal of the free silicon either by vaporization or by etching when treating silicon containing silicon carbide layers containing at least 15% weight of excessive silicon. In the alternative, when no excessive silicon is present, the roughening can be done by laser shots pitting the surface. The pores provided by such a step are then loaded with carbon by (repeated) application of a cokable resin followed by coking, said resin can be soaked into the pores or attached as silicon containing resin wafer of cokable material. The surfaces to be joined are united and are heated, preferably at from 1600 DEG to 1800 DEG C. in the presence of silicon that is either made available at the edges of the joint as a liquid or else has been provided in the joint by a synthetic resin foil in which silicon powder is dispersed.