DE3246810

Control circuitry used with the combination of a control switch (typically a gated diode switch GDS) which is coupled to a control (gate) terminal of a like load switch which consists essentially of first and second p-n-p transistors. The collector of the first p-n-p transistor is coupled to an anod...

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Bibliographische Detailangaben
Hauptverfasser: HARTMAN, ADRIAN RALPH, MURRAY HILL, N.J., US, KOHL, JAMES ELWOOD, NORTH BRUNSWICK, N.J., US, MACPHERSON, WILLIAM FREDERICK, WHEATON, ILL., US, RILEY, TERENCE JAMES, WYOMISSING, PA., US
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Control circuitry used with the combination of a control switch (typically a gated diode switch GDS) which is coupled to a control (gate) terminal of a like load switch which consists essentially of first and second p-n-p transistors. The collector of the first p-n-p transistor is coupled to an anode of the control switch. The emitter of the first p-n-p transistor is coupled to the base of the second p-n-p transistor and to a control circuitry input terminal. The collector of the second p-n-p transistor is coupled to a gate terminal of the control switch. The control circuitry limits undesirable current flow into the load switch and has fewer components than commonly used control circuitry which performs a like function.