BAUELEMENTE UND ARRAYS AUS SILIZIUM ZUR DETEKTION VON INFRAROTEM LICHT

BAUELEMENTE UND ARRAYS AUS SILIZIUM ZUR DETEKTION VON INFRAROTEM LICHT

An infrared detector element of the Schottky-barrier type is constructed to have its sensitivity in the range of about 8 to 12 microns. For this purpose a silicon substrate (1) has a highly doped surface layer (3) of p+-silicon with a doping density in the range of 5x1018 to 5x1019 (atoms per cm3) a...

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Bibliographische Detailangaben
Hauptverfasser: KOENIGER,MAX,ER.NAT, MUELLER,GERHART,ER.NAT
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:An infrared detector element of the Schottky-barrier type is constructed to have its sensitivity in the range of about 8 to 12 microns. For this purpose a silicon substrate (1) has a highly doped surface layer (3) of p+-silicon with a doping density in the range of 5x1018 to 5x1019 (atoms per cm3) and a thickness in the range of 50 to 200 Angstroms. On top of this layer (3) a metal layer (2) for example of platinum is deposited and partially alloyed into layer (3) to form PtSi. Such elements are arranged in arrays and may be combined with other detector elements having their sensitivity in other spectrum ranges, e.g., 3 to 5 microns and/or in the visible spectrum range.