DE3208638

A light emitting diode has a substrate body consisting of silicon carbide, which is transmissive for the luminescent radiation generated by the diode. The diode has a first epitaxially deposited layer, consisting of silicon carbide of a first conductivity type, disposed on the substrate body, and a...

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Bibliographische Detailangaben
Hauptverfasser:	HOFFMANN, LUDWIG ER.NAT, THEIS, DIETMAR DR.., 8000 MUENCHEN, DE, WEYRICH, CLAUS PHIL., 8000 MUENCHEN, DE, ZIEGLER, GUENTHER ER.NAT., 8520 ERLANGEN, DE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A light emitting diode has a substrate body consisting of silicon carbide, which is transmissive for the luminescent radiation generated by the diode. The diode has a first epitaxially deposited layer, consisting of silicon carbide of a first conductivity type, disposed on the substrate body, and a second epitaxially deposited layer of silicon carbide of a second conductivity type disposed on the first layer. The diode has one electrode connected to the second layer and another electrode connected to an exposed portion of the first layer.