HALBLEITERVORRICHTUNG
A semiconductor device with a planar p-n junction and a guard ring region, wherein an oxide film is covered on the surface between the p-n junction and the guard ring, and a glass film is formed on the surface surrounding the guard ring region.
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| creator | HIDESHIMA,MAKOTO TANI,KEIZO |
| description | A semiconductor device with a planar p-n junction and a guard ring region, wherein an oxide film is covered on the surface between the p-n junction and the guard ring, and a glass film is formed on the surface surrounding the guard ring region. |
| format | Patent |
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| language | ger |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | HALBLEITERVORRICHTUNG |
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