HALBLEITERVORRICHTUNG

A semiconductor device with a planar p-n junction and a guard ring region, wherein an oxide film is covered on the surface between the p-n junction and the guard ring, and a glass film is formed on the surface surrounding the guard ring region.

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HIDESHIMA,MAKOTO, TANI,KEIZO
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A semiconductor device with a planar p-n junction and a guard ring region, wherein an oxide film is covered on the surface between the p-n junction and the guard ring, and a glass film is formed on the surface surrounding the guard ring region.