N-KANAL MOS-SPEICHER

N-KANAL MOS-SPEICHER

In an MOS device fomed in an epitaxial layer 14 on a highly-doped substrate 12 of the same conductivity type, the thickness of the layer 14 is small compared with the diffusion length of minority carriers in the layer. The diffusion contribution to leakage currents is thereby reduced, and if the dif...

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Bibliographische Detailangaben
Hauptverfasser: THEODORE CLEMENS,JAMES, WALTER PEARCE,CHARLES, ASHVINIKUMAR MEHTA,DINESH, SUN,ROBERT CHING-I, THOMAS NELSON,JAMES
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Zusammenfassung:In an MOS device fomed in an epitaxial layer 14 on a highly-doped substrate 12 of the same conductivity type, the thickness of the layer 14 is small compared with the diffusion length of minority carriers in the layer. The diffusion contribution to leakage currents is thereby reduced, and if the difference in dopant concentration between the layer and the substrate is great enough there is also a gettering effect tending to remove minority carrier generation centres from the layer. An application is to dynamic IGFET random-access memories where a reduction in leakage current leads to an increase in hold time.