DE2822166

An improved semiconductor device having a semiconductor body comprising a transistor having an emitter contiguous to the surface, of a first type of conductivity, a base equally contiguous to the surface, of the conductivity type, and a manifold adjacent to the base, of the first type of conductivity, the emitter zone being formed at least mainly by a row of finger-like regions, which will be referred to below as digitor emitting regions, of the first type of conductivity extending substantially parallel to each other and in a direction substantially transverse to the longitudinal direction of the row in the base zone, characterized in that, in order to obtain an unequal dissipation in the longitudinal direction of the row, and therefore an improvement of the uniformity in the distribution of temperatures in the semiconductor body, the digitized emitter zones have different lengths. (Machine-translation by Google Translate, not legally binding)