HALBLEITERVORRICHTUNG UND VERFAHREN ZU IHRER HERSTELLUNG

A semiconductor manufacturing method and device made therefrom by forming an insulating SiO2 film on both surfaces of a silicon substrate using an ion implantation process to form a buried SiO2 layer within the substrate a predetermined depth beneath one of the substrate surfaces, isolating a body of the substrate layer lying above the buried layer, and forming a semiconductive device in the isolated body. The surface layers of SiO2 serve to mechanically balance the internal strains generated within the substrate during the formation of the buried layer and thereby prevent the creation of mechanical imperfections in the surface portions of the substrate.