DE2757821

The Mesa semiconductor device comprises an n-p-n-p structure with side walls protected by a silicon rubber layer. The anode is bonded to a carrier plate (80) which in turn is soldered to a terminal plate or clamping plate (84). This plate is attached to a piston. A flat metal plate is placed over th...

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Hauptverfasser: TAKIGAMI, KATSUHIKO, YAMATO, KANAGAWA, JP, UTAGAWA, TADASHI, YOKOHAMA, JP, SAITO, YASUMASA, TSUJI, ISAMU, ITAZU, NOBUO, YOKOHAMA, KANAGAWA, JP, TSUKAKOSHI, TSUNEO, ZUSHI, KANAGAWA, JP
Format: Patent
Sprache:eng
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