DE2757821

The Mesa semiconductor device comprises an n-p-n-p structure with side walls protected by a silicon rubber layer. The anode is bonded to a carrier plate (80) which in turn is soldered to a terminal plate or clamping plate (84). This plate is attached to a piston. A flat metal plate is placed over the top faces of the Mesa cathodes (70a-d), the width of the plate being at least that of the distance between the outside edges of the outermost cathodes. Pressure is then applied to the plate so that the central area of the semiconductor is deformed inwards. The pressure applied is between 300 and 450 kg/cm2. However, the cathode layer sections are not deformed by this method of construction and no short-circuit can occur between the cathode and the gate.