Integrated semiconductor switching element - has bipolar transistor whose base is coupled to substrate by first conductivity channel

Integrated semiconductor switching element - has bipolar transistor whose base is coupled to substrate by first conductivity channel

The switching element for rapid action is based on a bipolar transistor integrated on a substrate (1) of first conductivity in a vertical series. Next to the substrate is provided a collector zone of opposite conductivity, then a base zone (3) of first conductivity, and finally an emitter zone of op...

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Bibliographische Detailangaben
Hauptverfasser: JAKOVLEVITSCH KREMLEV,VJATSCHESLAV, SERGEEVITSCH LJUBIMOV,EVGENIJ, SCHAKANOVITSCH ERSCHANOV,RUSTEM, NIKOLAEVITSCH KOKIN,VILJAM, MICHAJLOVITSCH MANSCHA,NIKOLAJ
Format: Patent
Sprache:eng ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The switching element for rapid action is based on a bipolar transistor integrated on a substrate (1) of first conductivity in a vertical series. Next to the substrate is provided a collector zone of opposite conductivity, then a base zone (3) of first conductivity, and finally an emitter zone of opposite conductivity. The base zone and the substrate are connected by a channel (5) of the substrate conductivity. The channel width is similar to the double max. thickness of the layer (14) of the space charge in the pn-junction between the collector zone and the channel.