Dry developing a photoresist - by exposure to plasma, esp. oxygen plasma, in partic. for semiconductor mfr

A substrate carrying a design is prepd. by (a) coating a substrate with a photoresist; (b) exposing the coating to a radiation pattern; and (c) exposing to a plasma, to remove pre-determined portions. The process is esp. for prodn. of semiconductors. A rapid, dry process is provided. The photoresis...

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Bibliographische Detailangaben
Hauptverfasser:	GUENTHER HUGHES,HENRY, V. KELLER,JED
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A substrate carrying a design is prepd. by (a) coating a substrate with a photoresist; (b) exposing the coating to a radiation pattern; and (c) exposing to a plasma, to remove pre-determined portions. The process is esp. for prodn. of semiconductors. A rapid, dry process is provided. The photoresis may be negative or positive, and is pref. formed from a vinylaromatic monomer. The compsn. pref.contains a photo-sensitiser, esp. an azide, diazo-oxide or thioazo cpd. Pref. in step (c) the coated, exposed disc is placed in a plasma generator and heated to 70 degrees C at a press. of 1 Torr, then O2 is introduced, and a high-frequency generator is switched on to generate an O2 plasma. The O2 press. is 0.05-10 Torr. At an energy of 100 watts, the photo-resist is completely developed in 3 mins.