VERFAHREN ZUR HERSTELLUNG VON SUBSTRATGEBUNDENEM, GROSSFLAECHIGEM SILICIUM

Process for the manufacture of silicon of large surface area bonded to a substrate, which comprises depositing silicon to a thickness of from 30 to 500 mu m onto panel-shaped substrates of glassy carbon (a glass-like carbon obtained by carbonizing a spatially cross-linked synthetic resin) that are h...

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Bibliographische Detailangaben
Hauptverfasser:	SCHMIDT,DIETRICH,.DR, AUTHIER,BERNHARD, RATH,HEINZ-JOERG,.DR, HOFER,JOHANN
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Process for the manufacture of silicon of large surface area bonded to a substrate, which comprises depositing silicon to a thickness of from 30 to 500 mu m onto panel-shaped substrates of glassy carbon (a glass-like carbon obtained by carbonizing a spatially cross-linked synthetic resin) that are heated by direct passage of an electric current to temperatures above the melting point of silicon, and thereafter cooling the silicon to a temperature below its melting point in the direction from its free surface toward the substrate. The invention also comprises the silicon panels so made which are especially useful in the manufacture of solar cells.