DE2628559

This invention relates to a method of growing a single quartz crystal stone. In particular, a method for hydrothermally growing a quartz stone from a quartz seed is disclosed. A substantially stress-free quartz stone is grown in an autoclave by clamping a quartz crystal seed plate in a clip so as to...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KROUPA, KENNETH MARTIN, LEE, SIMPSON, EARLE EDWARD, GEORGETOWN, MASS, HORNIG, CARL FREDERICK, KINGSTON
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:This invention relates to a method of growing a single quartz crystal stone. In particular, a method for hydrothermally growing a quartz stone from a quartz seed is disclosed. A substantially stress-free quartz stone is grown in an autoclave by clamping a quartz crystal seed plate in a clip so as to permit substantially unobstructed growth of the stone in the plane of the seed plate, and growing at least a portion of the stone through at least one aperture formed in the clip.