HALBLEITERSPEICHERZELLE

1516058 Semi-conductor memory cells SIEMENS AG 22 March 1977 [4 May 1976] 11928/77 Heading H1K A storage cell comprises a MOS selector transistor ATV formed in a V-shaped groove GR in an epitaxial layer E and connected to a storage capacitor CS, the groove extending into a buried region BU in a semi-conductor substrate SU. The transistor ATV is formed by a polysilicon word line WL which forms the gate electrode in the groove GR, a diffused region which acts as a bit line BL and one (S or D) electrode of the transistor ATV, and the buried region BU which forms the other (D or S) electrode of the transistor and also one electrode of the capacitor CS. The capacitor is formed by the PN junction capacitance between the buried region BU and the substrate SU.