DE2545908
A Gate Modulated BiPolar Transistor, or GAMBIT, is a three terminal negative resistance device. A load is connected between the emitter and collector terminals and the magnitude of the negative resistance is controlled by the voltage on the gate terminal. An increase in the output voltage modulates...
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| creator | KRISHNA, SURINDER, BALLSTON LAKE, N.Y., US HOUSTON, DOUGLAS EUGENE BALIGA, BANTVAL JAYANT, SCHENECTADY, N.Y., US |
| description | A Gate Modulated BiPolar Transistor, or GAMBIT, is a three terminal negative resistance device. A load is connected between the emitter and collector terminals and the magnitude of the negative resistance is controlled by the voltage on the gate terminal. An increase in the output voltage modulates the resistance of the gate which decreases the output current. |
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A load is connected between the emitter and collector terminals and the magnitude of the negative resistance is controlled by the voltage on the gate terminal. 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A load is connected between the emitter and collector terminals and the magnitude of the negative resistance is controlled by the voltage on the gate terminal. An increase in the output voltage modulates the resistance of the gate which decreases the output current.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1987</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOB0cTUyNTG1NLDgYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxcPXORsZEKAEAz8Magg</recordid><startdate>19870205</startdate><enddate>19870205</enddate><creator>KRISHNA, SURINDER, BALLSTON LAKE, N.Y., US</creator><creator>HOUSTON, DOUGLAS EUGENE</creator><creator>BALIGA, BANTVAL JAYANT, SCHENECTADY, N.Y., US</creator><scope>EVB</scope></search><sort><creationdate>19870205</creationdate><title>DE2545908</title><author>KRISHNA, SURINDER, BALLSTON LAKE, N.Y., US ; HOUSTON, DOUGLAS EUGENE ; BALIGA, BANTVAL JAYANT, SCHENECTADY, N.Y., US</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE2545908C23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1987</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KRISHNA, SURINDER, BALLSTON LAKE, N.Y., US</creatorcontrib><creatorcontrib>HOUSTON, DOUGLAS EUGENE</creatorcontrib><creatorcontrib>BALIGA, BANTVAL JAYANT, SCHENECTADY, N.Y., US</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KRISHNA, SURINDER, BALLSTON LAKE, N.Y., US</au><au>HOUSTON, DOUGLAS EUGENE</au><au>BALIGA, BANTVAL JAYANT, SCHENECTADY, N.Y., US</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DE2545908</title><date>1987-02-05</date><risdate>1987</risdate><abstract>A Gate Modulated BiPolar Transistor, or GAMBIT, is a three terminal negative resistance device. A load is connected between the emitter and collector terminals and the magnitude of the negative resistance is controlled by the voltage on the gate terminal. An increase in the output voltage modulates the resistance of the gate which decreases the output current.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | DE2545908 |
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