DE2545908

A Gate Modulated BiPolar Transistor, or GAMBIT, is a three terminal negative resistance device. A load is connected between the emitter and collector terminals and the magnitude of the negative resistance is controlled by the voltage on the gate terminal. An increase in the output voltage modulates...

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Bibliographische Detailangaben
Hauptverfasser:	KRISHNA, SURINDER, BALLSTON LAKE, N.Y., US, HOUSTON, DOUGLAS EUGENE, BALIGA, BANTVAL JAYANT, SCHENECTADY, N.Y., US
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A Gate Modulated BiPolar Transistor, or GAMBIT, is a three terminal negative resistance device. A load is connected between the emitter and collector terminals and the magnitude of the negative resistance is controlled by the voltage on the gate terminal. An increase in the output voltage modulates the resistance of the gate which decreases the output current.