DE2431079

1502334 Integrated circuits INTERNATIONAL BUSINESS MACHINES CORP 21 May 1975 [28 June 1974] 21857/75 Heading H1K [Also in Division H3] A data store (see Division G4) is formed on a substrate 50 of P-silicon having bit lines B0, B1 formed of N-silicon and also forming the drain of FETs, the sources o...

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Hauptverfasser: BARSUHN, HORST., 7031 HOLZGERLINGEN, GSCHWENDTNER, JOERG., 7300 ESSLINGEN, HAUG, WERNER OTTO., 7030 BOEBLINGEN
Format: Patent
Sprache:eng
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Zusammenfassung:1502334 Integrated circuits INTERNATIONAL BUSINESS MACHINES CORP 21 May 1975 [28 June 1974] 21857/75 Heading H1K [Also in Division H3] A data store (see Division G4) is formed on a substrate 50 of P-silicon having bit lines B0, B1 formed of N-silicon and also forming the drain of FETs, the sources of which are formed of N-silicon at 51. The substrate is covered with arelatively thin layer 52 of SiO 2 /Si 3 N 4 which forms the gate dielectric of the FETs and the dielectric of the storage capacitors. A layer 54 of doped polycrystalline silicon has a resistivity of less than 1 kilohm/square and is connected to the substrate potential and serves as one of the capacitor electrodes over the source zone 51. Layer 54 also prevents undesirable inversion of the semiconductor surface. An intermediate insulating layer 56 of SiO 2 and gate metallization 55 are also applied extending as word lines WL orthogonally to the bit lines B0, B1.